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| IRFE230 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL POWER MOSFET 2.16 (0.085) 1.27 (0.050) 1.07 (0.040) 9.14 (0.360) 8.64 (0.340) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 7.62 (0.300) 7.12 (0.280) 17 18 1 2 0.76 (0.030) 0.51 (0.020) 10 9 8 VDSS ID(cont) RDS(on) FEATURES * SURFACE MOUNT * SMALL FOOTPRINT 200V 4.8A 0.46 7 6 5 4 3 1.65 (0.065) 1.40 (0.055) 0.33 (0.013) Rad. 0.08 (0.003) 1.39 (0.055) 1.15 (0.045) 0.43 (0.017) 0.18 (0.007 Rad. * HERMETICALLY SEALED * DYNAMIC dv/dt RATING LCC4 MOSFET GATE DRAIN SOURCE * AVALANCHE ENERGY RATING PINS 4,5 1,2,15,16,17,18 6,7,8,9,10,11,12,13 TRANSISTOR BASE COLLECTOR EMITTER * SIMPLE DRIVE REQUIREMENTS * LIGHT WEIGHT ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS ID ID IDM PD EAS dv/dt TJ , Tstg Gate - Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25C Linear Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Surface Temperature ( for 5 sec). 2 20V (VGS = 10V , Tcase = 25C) (VGS = 10V , Tcase = 100C) 4.8A 3.1A 19A 22W 0.17W/C 54mJ 4.5V/ns -55 to +150C 300C Notes 1) Pulse Test: Pulse Width 300s, 2% 2) @ VDD = 50V , L 570H , RG = 25 , Peak IL = 14A , Starting TJ = 25C 3) @ ISD 14A , di/dt 140A/s , VDD BVDSS , TJ 150C , Suggested RG = 7.5 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk Website http://www.semelab.co.uk 10/98 IRFE230 ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain - Source Breakdown Voltage BVDSS Temperature Coefficient of TJ Breakdown Voltage Static Drain - Source On-State RDS(on) Resistance 1 VGS(th) Gate Threshold Voltage gfs Forward Transconductance 1 IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Test Conditions VGS = 0 ID = 1mA Reference to 25C ID = 1mA VGS = 10V ID = 3.1A VGS = 10V ID = 4.8A VDS = VGS ID = 250mA VDS 15V IDS = 3.1A VGS = 0 VDS = 0.8BVDSS TJ = 125C VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 4.8A VDS = 0.5BVDSS VDD = 100V ID =4.8A RG = 7.5 Min. 200 Typ. Max. Unit V 0.25 0.40 0.46 4 25 250 100 -100 600 250 80 7.4 2.5 6.0 42.1 5.3 28.1 30 50 50 40 4.8 19 1.4 6.0 3.0 Negligible 1.8 4.3 5.8 19 V / C V S (E) A nA 2 2.5 pF nC ns SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 IS = 4.8A TJ = 25C Diode Forward Voltage 1 VGS = 0 Reverse Recovery Time IF = 4.8A TJ = 25C Reverse Recovery Charge 1 di / dt 100A/s VDD 50V Forward Turn-On Time PACKAGE CHARACTERISTICS Internal Drain Inductance (measured from 6mm down drain lead to centre of die) Internal Source Inductance (from 6mm down source lead to source bond pad) THERMAL CHARACTERISTICS Thermal Resistance Junction - Case Thermal Resistance Junction - PC Board A V ns C nH RJC RJPC C/W Notes 1) Pulse Test: Pulse Width 300ms, 2% 2) Repetitive Rating - Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk Website http://www.semelab.co.uk 10/98 |
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